| 482 | 59 | 340 |
| 下载次数 | 被引频次 | 阅读次数 |
文章归纳了大量有关ZnO薄膜光致发光的实验结果,并与理论计算的能级图相比较,通过分析得出了以下结论:红光的发射与氧空位(Vo)及锌填隙(Zni)有关;绿光及蓝光的发射除与氧空位(Vo)及锌填隙(Zni)有关外,还与锌空位(VZn)有关。
Abstract：In this paper, some photoluminescence spectra of ZnO thin films are compared with the energy level as has been worked out with the full - potential linear muffin - tin orbital method (FP - LMTO) . The paper concludes that the emission of the red light is rekted to oxygen vacancies and zinc intervals, while that of the green and the blue light to zinc intervals and zinc vacancies a well as oxygen vacancies.
[1] Vanheusden K, Seager C H. Correlation between photoluminescence and oxygen vancancies in Zno phosphors[J]. Appl Plays Lett, 1996, 68(3) : 403-405．
[2] Look D C, Reynolds D C. Point defect charactrization of GaN and ZnO[J]. Materials Science and Engineering B, 1999, 66: 30-32．
[3] Segawa Y, Ohtomo A. Growth of ZnO thin film by laser MBE. Lasing of exciton at room temperature[J]. Phys Status Solidi B, 1997, 202: 669-672．
[4] 叶志镇,陈汉鸿,刘榕,等.直流磁控溅射ZnO薄膜的结构和室温PL谱[J].半导体学报,2001,22(8) :1015-1018．
[5] 梅增霞,张希清,衣立新,等.ZnO薄膜的制备和发光特性的研究[J].发光学报,2002,23(4) :389-392．
[6] 王玉玺,张伟力.纳米氧化锌薄膜的光致发光特性研究[J].哈尔滨师范大学自然科学学报,2002,18(3) :27-30．
[7] 叶建东,顾书林,朱顺明,等.高质量ZnO薄膜的退火性质研究[J].高技术通讯,2002,12:45-48．
[8] 支壮志,李炳生,刘益春,等.生长温度对等离子体增强化学气相沉积生长ZnO薄膜质量的影响[J].真空科学与技术,2002,22(1) :81-84．
[9] 张德恒,王卿璞,薛忠营.不同衬底上的ZnO薄膜紫外光致发光[J].物理学报,2003,52(6) :1484-1487．
[10] 郭常新,傅竹西,施朝淑.阴极射线激发下ZnO薄膜室温紫外发光的超线性增长规律[J].发光学报,1998,19(3) :239-241．
[11] 徐彭寿,孙玉明,施朝淑,等.ZnO及其缺陷电子结构对光谱特性的影响[J].红外与毫米波学报,2002,21(增刊):91-96．
[12] Kohan A F, Ceder G, Morgan D, et al. First-principles study of native point defects in ZnO[J]. Phys Rev B, 2000, 61: 15019-15027．
[13] 傅竹西,林碧霞,郭常新,等.氧化锌半导体薄膜的发光光谱特性[J].半导体学报,1999,20(9) :827-830．
[14] Fu Zhuxi, Guo Changxin, Lin Bixia, et al. Cathodoluminecence of ZnO films[J]. Chin Phys Lett, 1998, 15(6) : 457-459．
[15] Fu Zhuxi, Lin Bixia, Zhu Jie, et al. MOCVD growth of ZnO films and their luminescence Properties[J]. Chin J Lumin 2001, 22(2) : 119-124(in Chinese).
[16] Lin Bixia, Fu zhuxi, Jia Yunbao. Green luminescence center in undoped zinc oxide films deposited on silicon substrates[J]. Appl Phys Lett, 2001, 79: 943-945．
[17] Xu Pengshou, Sun Yuming, Shi Chaoshu, et al. Native point defect states in ZnO[J]. Chin Phys Lett, 2001, 18(9) : 1252-1253．
[18] Zhang D H. Properties of ZnO films Prepared by ion beam assisted reactive deposition and by r f bias sputtering[D]. Ph D Thesis University of Waterloo, 1993, 13-15．
[19] Cho S, Ma J, Kin H. Photoluminescence and ultraviolet lasing of polycrystalline ZnO films prepared by the oxidation of the metal Zn [J]. Appl Phy Lrtt, 1999, 75(18) : 2761-2763．
[20] Sukkar M H, Tuller H L. in Advances in Ceramics[M]. Columbus: American Ceramic Society, 1982, 7: 71-72．
[21] Xu Peng-shou, Sun Yu-ming, Shi Chao-shu, et al. Electronic structure of ZnO and its defects. Science in China (A), 2001, 44(9) : 1174-1181．
基本信息:
中图分类号:O484.4
引用信息:
[1]缪世群.ZnO薄膜的光谱及能级[J].南通工学院学报(自然科学版),2003(04):25-28.
2003-12-30
2003-12-30