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介绍了铂(Pt)/p型硅纳米线(p-SiNWs)肖特基二极管的制备方法,在300370 K温度范围内,测量了Pt/p-SiNWs肖特基二极管I-V特性.根据热发射(TE)、产生-复合(GR),隧穿(TU)和漏电流(RL)理论模型,拟合了肖特基二极管电流传输机制,拟合结果说明Pt/p-SiNWs肖特基二极管中电流传输机制为缺陷辅助隧穿机制.此外,根据实验数据计算了肖特基二极管主要特征参数,二极管理想因子n随温度升高而减小,势垒高度Φb0随温度升高而增加,并且隧穿参数E0不随温度而变化.
Abstract：The Schottky diodes of Platinum(Pt) thin film on p-silicon nanowires(p-SiNWs) tips are fabricated.The current-transport mechanism of Pt/p-SiNWs is defect-assisted tunneling(TU).The experimental I-V data is measured and fitted to the analytical expressions of the thermionic emission(TE),generation-recombination(GR),TU,and leakage(RL) current-transport mechanisms in the temperature range of 300370 K and voltage range of-11 V.The TU fitting data is in an excellent agreement with the experimental data.Meanwhile,the main characteristic parameters of Schottky are calculated based on the experimental data.Ideality factor n decreases with increasing temperature.The zero-barrier height Φb0increases with increasing temperature and the tunneling parameter E0 is independent of the temperature,which all are closely followed the TU current-transport mechanism.Hence,those results indicate that defect-assisted tunneling is dominant current-transport mechanism in Pt/p-SiNWs Schottky diodes.
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基本信息:
DOI：
中图分类号:TN311.7
引用信息:
[1]王志亮,张健.基于硅纳米线缺陷辅助隧穿肖特基二极管研究[J],2012,11(01):1-5.
基金信息:
国家自然科学基金项目(61076070);; 上海市教委创新计划项目(09ZZ46);; 江苏省高校自然科学研究项目(11KJB510023);; 南通大学自然科学基金项目(10Z023,10Z025)