| 93 | 1 | 24 |
| 下载次数 | 被引频次 | 阅读次数 |
研究了分子束外延生长的不同含量的GaAs1-xSbx/GaAs量子阱的光荧光特性和时间分辨光谱特性.分析表明,利用电子空穴分离导致了能带弯曲和能带填充效应,实验结果说明了GaAs1-xSbx/GaAs异质结至少在Sb原子数目百分比为16%￣26%时是Type-II结构.
Abstract：The fluorescent characteristic and the time resolution spectrum characteristic of GaAs1-xSbx /GaAs quantum wells grown on molecular beam epitaxy(MBE) are studied.By analyzing the experimental results,we can show that the separation of electrons and holes in GaAs1-xSbx /GaAs heterostructure results in band-bending and band-filling effects.The results suggest that GaAs1-xSbx /GaAs heterostructure is Type-II when Sb concentration is between 16 % and 26 % at least.
[1]Yamada M,Anan T,Kurihara K,et al.Room temperaturelow-threshold CW operation of 1.23μm GaAsSb VCSELs onGaAs substrates[J].Electron.Lett.,2000,36:637-638.
[2]Quochi F,Kilper D C,Cunningham J E,et al.Continuous-wave operation of a 1.3-μm GaAsSb-GaAs quantum-wellvertical-cavity surface-emitting laser at room temperature[J].IEEE Photonics Technology Letters,2001(13):921.
[3]Ha W,Gambin V,Wistey M,et al.Long wavelength GaIn-NAsSb/GaNAsSb multiple quantum well lasers[J].Electron.Lett.,2002(38):277.
[4]Vurgaftman I,Meyer J R,Ram-Mohan L R.Band parametersfor III-V compound semiconductors and their alloys[J]J.Appl.Phys.,2001(89):5815
[5]Teissier R,Sicault D,Harmand J C,et al.Temperature-de-pendent valence band offset and band-gap energies of pseu-domorphic GaAsSb on GaAs[J].J.Appl.Phys.,2001(89):5473.
[6]Van der Walle C G.Band lineups and deformation potentialsin the model-solid theory[J].Phys.Rev.B,1989(39):1871.
[7]Liu Guobin,Chuang Shun-Lien,Seoung-Hwan park.Opticalgain of strained GaAsSb/GaAs quantum-well lasers:A self-consistent approach[J].J.Appl.Phys.,2000(88):5554.
[8]Prins A D,Dunstan D J,Lambkin J D,et al.Evidence oftype-I band offsets in strained GaAs1-xSbx/GaAs quantumwells from high-pressure photoluminescence[J].Singer Phys.Rev.B,1993(47):2191.
[9]Luo X D,Hu C Y,Xu Z Y,et al.Selectively excited photo-luminescence of GaAs1-xSbx/GaAs single quantum wells[J].Appl.Phys.Lett.,2002(81):3795.
[10]Liu Q,Kerksen S,Lindner A,et al.Evidence of type-IIband alignment at the ordered GaInP to GaAs heterointer-face[J].J.Appl.Phys.,1995(77):1154.
[11]Moore K J,Dawson P,Foxon C T.Effects of electronic cou-pling on the band alignment of thin GaAs/AlAs quantum-well structures[J].Phys.Rev.B,1988(38):3368.
[12]Cebulla U,Forchel A,Trankle G,et al.Direct-indirectband gap crossover in two-dimensional GaSb/AlSb-quan-tum-well-structures[J].Superlattices&Microstruct,1987(3):429.
基本信息:
DOI：
中图分类号:O471.1
引用信息:
[1]成鸣飞,成珏飞,罗向东.GaAs_(1-x)Sb_x/GaAs量子阱的Type-II特性[J].南通大学学报(自然科学版),2006(02):7-9+14.
基金信息: