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由于具有高信噪比、易于集成和高电子迁移率等特点，基于高电子迁移率晶体管（HEMT）成为下一代无线通信系统中半导体器件的热门选择。高度精确的模型对于精确预测器件性能至关重要。本文研究了高电子迁移率晶体管的线性模型和参数提取方法，并考虑了分布电容效应。基于小信号等效电路模型，建立了适用于InP HEMT 的本征元件直接参数提取流程。在多偏置条件下，使用25×2 μm（栅宽×栅指数）的InP HEMT器件在500MHz～40GHz频率范围内进行了验证。结果表明，模拟数据与测量数据吻合良好，验证了模型和提取方法的准确性。
Abstract：Due to its high signal-to-noise ratio， easy integration and high electron mobility， high electron mobility transistors (HEMTs) have become a popular choice of semiconductor devices in next-generation wireless communication systems. Highly accurate models are critical to precisely predict the device performance.The linear model and parameter extraction method of high electron mobility transistor are studied in this paper， and the distributed capacitance effect is considered. Based on the small-signal equivalent circuit model， a direct parameter extraction procedure for the intrinsic elements of InP HEMT is established. The 25 × 2 μm (unit gate width×number of gate fingers) InP HEMT device was characterized and validated under multiple bias conditions over the frequency range from 500 MHz to 40 GHz.The results show that the modeled and measured data are in good agreement， which verifies the accuracy of the model and the extraction method.
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基本信息:
中图分类号:TN386
引用信息:
[1]冯长乐,罗坤,张傲,等.面向下一代无线通信InP HEMT建模及参数提取方法研究[J].南通大学学报(自然科学版)().
基金信息:
国家自然科学基金面上项目(62471257); 江苏高校“青蓝工程”项目
2026-05-22
2026-05-22
2026-05-22